High-performance 4H-SiC Schottky UV Photodiodes by 1000 °C RTP for High-temperature Ultraviolet detection

In this work, a high-temperature 4H-SiC Schottky ultraviolet (UV) photodiodes (PDs) with RTP has been successfully fabricated and characterized from room temperature (RT) up to 400 °C. The fabricated Schottky contact achieved a higher Schottky barrier height (SBH) of 1.54eV and a very low dark current of 1.53 × 10
⁻¹³
A and 1.3 × 10
⁻⁹
A, respectively, at RT and 400 °C. Under 254-nm illumination, a high photo-to-dark current ratio (PDCR) of about 5.35 × 10
⁴
at -20V bias is achieved at RT. Even up to 400°C, the measured PDCR is still to about 16.1. Moreover, a fast response time of about 2ms is also realized from RT to 400 °C. These results exhibit the proposed novel SiC Schottky PD with a good potential for high-temperature UV applications.