Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile

An analytical Superjunction (SJ) structure with two zones variation vertical doping profile (VVD-SJ) is proposed in this article. The 2-D electric field distributions are derived by charge superposition method. Optimization is carried out based on the MATLAB. The validity of the electric field distributions, breakdown voltage (BV) and impact ionization integral are demonstrated by TCAD MEDICI. The optimized results show the R
on,sp
of the VVD-SJ can be reduced by ~16% compared with that of convention SJ.