Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode

A comprehensive research on the analytical model and influence factors of plasma extraction transit time (PETT) oscillation during reverse recovery process of non-punchthrough (NPT) p-i-n diode is presented in this article. First, the experimental platform is setup to evaluate PETT oscillation under various conditions, and the result demonstrates that the oscillation on gate voltage is induced by the mutual inductance with oscillation loop. In addition, a physical model is established to investigate the features and occurrence condition of PETT oscillation based on the operating rule of electrical field and excess carrier inside diode. Furthermore, the time and frequency characteristics are defined, and the influence of load current, bus voltage, junction temperature, and switching speed is investigated based on the experimental waveforms. The analytical model illustrates that the time features increase with current logarithm and reciprocal of bus voltage, which is consistent with experimental results.