Total Ionizing Dose Impact on 22-nm FD-SOI Ring Oscillator Current and Frequency

Total ionizing dose (TID) has a significant effect on silicon-on-insulator (SOI) circuits, manifesting primarily as a front-gate threshold voltage (
$V_{t}$
) shift. This article presents data on ring oscillator (RO) responses of 22-nm fully depleted (FD-SOI) thin oxide (core logic) devices to gamma-ray doses above 1 Mrad(Si). We show large current and frequency TID response differences between ROs comprised of different logic gates. Moreover, the extensive experimental results presented here show that these responses vary significantly with
$V_{t}$
and well type. The measurements show that depending on the expected dose and transistor
$V_{t}$
used, TID-induced standby current (
$I_{\mathrm {SB}}$
) increases may have a substantial impact on overall power in spaceborne integrated circuits (ICs) using this fabrication process. The TID impact on digital circuit timing margins is also discussed.