Analysis of the Schottky Barriers with Au-Si Diode as Example

The formation of the Schottky barrier is a complex process from a metal-semiconductor contact with rectifying properties. The theoretical numerical value of the Schottky potential could differ hugely from the factual magnitude due to the Pinning Effect. Since there is no direct formula to obtain the factual magnitude, this paper utilizes Photocurrent method, Thermal-electron method and Fitting method to determine the factual value of the Schottky Barriers. The results of the photocurrent method and the fitting method support each other well, while the thermionic method is not accurate due to the non-ideal fabrication of the node of the diode. If the external environment including temperature and lighting conditions are precisely controlled and kept stable, the results of the fitting method should be very accurate.