Multiobjective optimisation of active gate drivers for fast-switching MOSFETs

High-speed semiconductor devices have been developed towards high frequency and power-density applications to improve efficiency. However, the large ringing and energy loss caused by the high-speed switching remain one of the key limitations to fulfil their full potential. This paper focuses on the profile of the gate driving signals that can reduce these quantities. As ringing and energy loss can not be simultaneously minimised, we propose a multiobjective optimisation. This aims at finding a set of solutions, such that for none of them it is possible to find other operating points with both lower energy loss and current overshoot. Results are presented both from simulations and a custom-built test platform, which illustrate the efficacy of the proposed technique.