Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaN Schottky diodes.