Surface morphology and electronic properties of SnTe films prepared by molecular beam epitaxy

SnTe films are prepared on GaAs (100) substrates by molecular beam epitaxy, and the surface morphology and electronic property are characterized using scanning electron microscope (SEM) and Hall effect measurements, respectively. A distribution of dotted materials on the surface were observed by SEM, which was probably related to segregated Te. The inclusion of hexagonal Te in the film has results in poor electronic property of the film.