Transient Analysis of MLGNR Interconnects with Single Event (SE) Crosstalk Induced Effects Based on FDTD Model

This paper investigates the single event crosstalk (SEC) effects for multilayer graphene nanoribbon (MLGNR) interconnects under various influencing factors, including tem-perature (200-600K), doping material, and the way of metal connection. A finite-difference time-domain (FDTD) model has been used to compare copper interconnects with MLGNR inter-connects. And it has been discovered that lithium (Li) doped top-contact (TC) MLG NR interconnects are more resistant to SEC noise than copper or side-contact (SC) MLGNR interconnects. This paper also evaluates the output of interconnects that employ the current-mode signaling (CMS) or voltage-mode signaling (VMS) scheme under the influence of SEC. It is found that the CMS scheme has a greater advantage than the VMS scheme for resisting the SEC effects due to its smaller peak voltage and pulse width. The results of the SPICE simulation and those of the FDTD model proposed in this paper have shown to be very congruent.