Low Frequency Noise of Channel-All-Around (CAA) InGaZnO Field Effect Transistors

In this work, we report on the results of the low-frequency (
$1/ {f}$
noise) measurements in vertical Channel-All-Around (CAA) InGaZnO field effect transistors, and the investigation of the
$1/\text{f}$
noise was performed for different temperatures, bias, and channel width. A physics-based model for the
$1/\text{f}$
noise is also developed. It was found that a unified fluctuation model modified by hopping transport can describe the
$1/\text{f}$
noise in InGaZnO FETs. More remarkable, by fitting the
$1/ {f}$
measurements data based on this model, the thermal-activated mobility was obtained, and the scattering coefficient between the oxide trapped carrier and channel carriers is extracted for the CAA InGaZnO transistor for the first time.