Field-Effect Transistors as THz radiation detectors

The paper presents our works on the measurement and characterization of two types of field-effect transistors (FETs) used for efficient detection of THz radiation: standard MOSFETs manufactured in a CMOS process on Si and SOI substrates and junctionless field-effect transistors (JLFETs) on SOI wafers. Based on the measurement results, we critically review and discuss the validity of the existing models: plasmonic and resistive mixing. The conclusions open space for further studies on the THz detection mechanism and on modeling this effect.