Investigation of Terahertz Spectra of Electrically Driven Two-Dimensional Plasmons in Grating-Gated AlGaN/GaN Heterostructures

Terahertz (THz) spectra of electrically driven two-dimensional (2D) plasmons in grating-gated AlGaN/GaN high-electron mobility transistor (HEMT) structure were investigated in emission and transmission geometry at the temperature of 80 K. The 2D plasmon resonances were observed in the frequency range of 1-3 THz. The resonance position and intensity were found to be related to the grating period and the bias voltage applied to the transistor terminals.