Single Transverse Mode Operation of Over 10 μm Wide Ridge-Type Semiconductor Lasers with Transversal Diffraction Gratings

This paper reports on single transverse mode operation of a ridge-type semiconductor laser with transversal diffraction gratings for a mesa width over 10 μm when the number of periods is 160, the grating pitch is 428.7 nm, and the grating depth is 250 nm.