Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET

The importance of short-circuit protection in the driving scheme is self-evident, and the key is the realization of fast and accurate short-circuit fault detection. The traditional drain-source voltage
$(V_{\text{ds}})$
short-circuit detection method sacrifices the speed to ensure the reliability of short-circuit protection by setting a relatively large blanking time constant. However, the shorter short-circuit withstand time of SiC MOSFET puts forward a higher requirement of short-circuit protection. Therefore, the improved
$V_{\text{ds}}$
short-circuit detection method proposed in this article enhances the self-adaptation to different short-circuit faults of SiC MOSFET, as a result speeding up the protection speed.