I. Introduction
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (mosfet) is a popular bandgap semiconductor device [1], [2], [3] featuring superior efficiency and high-temperature capability [4]. Recently, there is a trend to replace traditional Si-based power devices with SiC mosfets in high-power-density and/or high-efficiency systems, such as electric vehicles, renewable energy systems, and more electric aircraft. However, reliability issue is one of the main challenges for large-scale applications of SiC mosfet due to its fast switching, thin gate-oxide, and smaller chip size [5], [6], [7]. It is estimated that about 38% of the faults in variable-speed ac drives in industry are due to failures of power devices [8]. In [9], an industry-based survey indicates that power devices are the most fragile components (about 31%) across different industry sectors. Thus, switch fault detection is important for the safe and reliable operation of power converter systems [10], [11].