Perspective of ferroeletric-HfO2 materials for electron device applications

HfO
2
is already accepted as an indispensable material for advanced logic devices in LSI. The emergence of ferroelectricity in doped-HfO
2
systems has further enhanced the value as potential material for memory devices. Several memory applications have been proposed and demonstrated using ferroelectric-HfO
2
, but most of those electrical performances are still in the development stage. In this work, we present our viewpoints of ferroelectric-HfO
2
study for the future electron device applications.