25-31-GHz Low Noise Amplifiers in 0.15-µm GaN/SiC HEMT Process

This paper presents two 25-31GHz LNAs in $0.15- \mu$ maN/SiC HEMT process. The proposed 2-stage CS LNA exhibits 15-17 dB gain with 2.4-3.1 dB NF, $17.4\mathrm{dBm}OP_{1dB}$ and $24.2\mathrm{dBm}\mathrm{OHP}_3$. In comparison, the proposed CS+Cascode LNA with a 15-18 dB gain and 2.2-2.8dB NF has only limited linearity of $5.2\mathrm{dBm}OP_{1dB}$ and $13.3 \mathrm{dBm}OP_{3}$. Both LNAs consume 0.3 W dc power and with a chip area of $1.4\times0.6 \mathrm{mm}^2$.