Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential

Particle-based Monte Carlo device simulators are an efficient tool to investigate the performance and reliability of transistors. The semiclassical theoretical model employed in the Monte Carlo device simulator is unsuccessful to describe some aspects of the multi-gate transistors that come from the quantum behavior of charge carriers. To take into consideration the space-quantization effects in these simulators, a quantum correction is necessary. We propose to include an effective potential in the Monte Carlo device simulator to address the wave-like behavior of electrons in n-type silicon FinFET and n-type silicon nanowire transistors. The effective potential has a unique parameter, which can be adjusted to find a line density using an Effective Potential-Poisson solver that matches with the line density calculated using a Schrodinger-Poisson solver. We demonstrated that using the effective potential model, the effect of the electron confinement is well described.