Negative Capacitance Double-Gate Vertical Tunnel FET with Improved Subthreshold Characteristics

Negative capacitance (NC) double-gate vertical tunnel FET (DG-NCTFET) is proposed and the impacts of ferroelectric critical parameters on the device's performance have been investigated. When the capacitance matching condition is satisfied, NC effects substantially improve the electrical characteristics of TFET to achieve ultra-steep subthreshold swing and high drivability without hysteresis.