A Pin Photodetector Based on a RF-SOI Substrate

In this work, A lateral PIN diode is fabricated based on the RF-SOI substrate. The diode is further used in UV photodetection and high-speed optical communication. It exhibits excellent linearity under various light intensity. The response spectrum of the photodiode shows UV-enhanced characteristics and its quantum efficiency reaches up to 89% at wavelength of 300nm. Thanks to the RF-SOI substrate which reduces the parasitic capacitance dramatically, the capacitance of the fabricated photodiode is as low as 0.4pF at −1V bias. The demonstrated photodiode based on RF-SOI substrate might be attractive for high speed optical communication system using short wavelength light.