Thickness shear mode epitaxial (10–12) LiNbO3 (11–20) AZO/(10–12) Al2O3 BAW resonator

LiNbO
3
have been used for the SAW filters because of their high Q and k. However, LiNbO
3
films have not used in the BAW industry because thickness extensional mode k
t
²
in the c-axis oriented LiNbO
3
films, which can be grown in the standard sputtering process, is significantly low compared with quasi-shear mode k
35
²
in the 168° Ycut LiNbO
3
. Therefore, the mechanical thinning of bulk LiNbO
3
single crystal plate has been used to fabricate the thin single crystalline layer for BAW resonators. In this study, we demonstrate the epitaxial growth of (10–12) LiNbO
3
on epitaxial (11–20) Al doped conductive ZnO layer (AZO)/(10–12) Al
2
O
3
substrate. Thickness shear mode acoustic properties of the resonator were reported.