Research on An Opposed-Electrode GaAs Photoconductive Semiconductor Switch at 8 μJ Excitation

In order to further explore the transmission properties of gallium arsenide photoconductive switch (GaAs PCSS), an opposed-electrode structure is employed in this paper. The research has an important meaning to the application of GaAs PCSS in the field of high-power ultrafast pulse technology. The real output waveform is collected as the applied bias voltage rises up from 0.8kV to 4.2kV at 8μJ optical excitation. It is worth mentioning that the pulse width of the switching waveform obtained is reduced when the bias voltage is equal to 2kV with a multiplication factor of approximately 0.5×10
⁴
, rather than having the typical lock-on characteristics. This is deeply involved with the internal photo-induced carriers’ dynamic process. The results are beneficial to prolong the lifetime of the switch and expand its application.