Organic Thin-Film Memcapacitive Device With Analog and Nonvolatile Memory Effect

An organic thin-film memcapacitive device, based on a partially covered organic semiconducting layer and a polymer electret charge trapping layer, is achieved. The device has a large number of capacitive states, with the effects of analog modulation upon writing and nonvolatile memory upon reading. A comprehensive physical model related to the tuning of the carrier accumulation threshold in the device is established to elaborate its memcapacitive characteristics. The memcapacitive device could be a good candidate as an organic thin-film electronic synapse with ultralow static power.