Thin Ag film formation on thin SOI substrate

We show that much better results for forming a thin Ag film on an insulator can be obtained by using the direct continuous current flowing method (CCFM). This method is as follows: while forming a film on a substrate with a conventional deposition method, direct constant current is made to flow on the film via small electrodes. We report the results of using CCFM to form a thin Ag film onto an SiO/sub x/ substrate and make a comparison with the ion beam deposition method.