Dynamic Characterizations of 650 V, 900 V and 1200 V SiC MOSFETs under Low Temperatures

In this article, the dynamic performances of different voltage levels silicon carbide (SiC) MOSFETs from different vendors are investigated. The evaluated SiC MOSFETs including SCT3120AL (650 V/21 A, ROHM), SCT3030AL (650V/70A, ROHM), C3M0120090D (900 V/23 A, CREE), C2M0025120 (1200 V/63 A, CREE), SCT50N120 (1200 V/65 A, STMicroelectronics), SCH2080KE (1200 V/40 A, ROHM), and MSA12N080A (1200 V/20 A, MONOLITH). The double pulse test circuit is used to evaluate the device dynamic performances. The liquid nitrogen and cryogenic chamber are used to achieve low temperature operation. Due to the malfunction of gate driver, the dynamic characterization results are only given in the temperature range of [143 K, 298 K]. The experiment results demonstrate that high voltage SiC MOSFETs (1200 V) have degraded dynamic performances, while the dynamic performances for low voltage SiC MOSFETs are relatively stable.