Comparison of loss behavior of discrete type and power module SiC transistor in 3-phase NPC converter

The paper initially deals, with the design procedure of precise loss - simulation model of SiC power transistor in PLECS simulation software. Because SiC technology is currently spreading within most of the power converter applications, many manufactures are adapting their products to this technology. There are various power components differing by packaging technology, or given design approach, thus power transistors are exhibiting invariant performance when comparing individual components. However, the efficiency performance of any power semiconductor system is currently main qualitative indicator due to several reasons. Therefore, optimal selection of power transistor components represents essential design issue within initial design stages of power converter. Evaluation of the accuracy of PLECS loss-model compared to the results of mathematical calculations recommended for analyzed converter topology (NPC converter) is given here. Consequently, suitable SiC transistor structures are compared, while evaluation of the NPC converter efficiency was the main criterion for proper transistor selection guideline.