InP HBT Technologies for sub-THz Communications

High-efficiency power amplifiers (PAs) will be critical building-blocks for future sub-THz communications systems. InP heterojunction bipolar transistors (HBTs) with THz-class transistor bandwidth demonstrate PAs with high RF power density and high efficiency at frequencies between 100-300GHz. We review the performance of a state-of-the-art InP HBT IC technology and reported IC results that are applicable to future sub-THz communications systems.