CNTFET: Comparative Study of Planar and Coaxial

We compare two different orientations of CNTFET in the present paper in order to assess their performance, which are planar and coaxial. Studies and investigation have been done by simulating other performance parameters like IV characteristics, density of state (DOS) vs. energy, potential vs. distance, transmission coefficient vs. energy, and density vs. distance. From the obtained results, it can be analyzed that both of the orientations perform differently at various parameters. For the same chirality and tube length (L = 5 nm and 20 nm), the max drain current for planner orientation is equal to 6 µA, and for coaxial, it is around 18 µA. In the density vs. distance plot for different chirality, the maximum density of charge carriers in coaxial is about 550 M/m at the center of the channel. For a planner, it is around 200 M/m. It is also observed that for planner CNTFET when the dielectric constant (k) increases from 16 to 80, there is a drastic change in current from around 7 µA to 25 µA, but for coaxial, it remains almost constant, which is 15 µA. So, from all this comparison, it was observed that coaxial outperformed planner CNTFET.