A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region

A novel high voltage low loss planar gate IGBT with improved p-body region (IPB-PIGBT) is proposed. The IPBPIGBT features an emitter trench as well as an n-type carrier stored (CS) layer inserted in the p-body region. The proposed structure not only reduces the on-state voltage drop ($V_{\mathrm{ceon}}$), but also reduces the turn-off loss ($E_{\mathrm{off})}$ without sacrificing the breakdown voltage (BV). Therefore, improved trade-off relationship between the $V_{\mathrm{ceon}}$ and E
off
are obtained. Simulation results show that the $V_{\mathrm{ceon}}$ at $J_{\mathrm{ce}}=75A/c\mathrm{m}^{2}$ for the IPB-PIGBT is only 2.6lV, which is reduced by 29.8% and 25.0% when compared with those of the conventional planar gate IGBT (CON-PIGBT) and planar gate IGBT with CS layer (CS-PIGBT), respectively. Moreover, at the same $V_{\mathrm{ceon}}$ of 2. S0V, the $E_{off}$ of the IPB-PIGBT is 42.18 mJ/cm
²
, which is 48.0% and 57.0% lower than those of the CS-PIGBT and CON-PIGBT, respectively.