Low Specific On-Resistance and Low Leakage Current β-Ga2O3 (001) Schottky Barrier Diode through Contact Pre-Treatment

In this paper, We illustrate three different contact pre-treatment methods during the Ga
2
O
3
SBD fabrication, including F
^-
plasma, organic (Acetone) and Chlorine (HCl) pre-treatment. HCl pre-treatment SBD shows the highest BFOM (121 MW/cm
²
) among ever reported Ga
2
O
3
SBDs without special termination design, rendering a low specific on-resistance of 2.05 mΩ•cm
²
. Leakage current at breakdown voltage (492V) of organic pre-treatment SBD is significantly reduced to 9.38e-6 A/cm
²
. Moreover, post metal annealing (PMA) can also improve the Schottky interface quality and realize high-performance Ga
2
O
3
SBDs.