Novel Hybrid SiGe-Silicon 5V pLDMOS on 28nm HKMG technology

Power Management IC (PMIC) of mobile devices typically requires the adoption of low-cost 5V LDMOS devices [1]. Due to the intrinsically higher electron mobility, the recent work has been focused on improving the 5V nLDMOS device by reducing the Rdson, which is critical for power efficiency [2],[3]. However, provided that a good Rdson is achieved for pLDMOS devices, it can replace nLDMOS as a High-side device for the DC-DC converter without requiring complex bootstrap gate control circuitry [4]. In this paper, we demonstrate a best-in-class 5V pLDMOS device with Rdson=2mΩ*mm
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and Breakdown Voltage (BV)>10V in 28nm gate-first High-K Metal Gate (HKMG) technology without any additional process step or mask on top of the baseline process.