Linearity Performance of Double Metal Negative Capacitance Field-Effect Transistors: A Numerical Study

In that work, we examined DM NCFETs (double metal negative capacitance field effect transistors) at better Linearity application in differentiate to the conventional device NCFETs through a recent thought of ferroelectric thick sheet (HfO
2
FE). Simulator of Visual TCAD is utilised to model NCFETs and DM NCFETs. The outcomes of DM NCFETs have been examined in the shape of transconductance (G
m
) enhanced by 9.0%, I
off
(leakage current) decreased by 47.0% over NCFETs, and enhanced execution of G
d
(output conductance), switching ratio I
on
/ I
off
, drain barrier induced lowering (DIBL) lowered by 6.0% over NCFETs, subthreshold swing (SS) declined by 5.0% over NCFETs. We examined also the linearity parameters such as intrinsic delay (T
i
), second and third order of voltage intercept point (VIP2 and VIP3), third order inter modulation distortion (IMD3), third-order input intercept point (IIP3). Therefore, DM NCFETs could be applicable in digital and analog, linearity parameter circuit applications.