Impact of Composite Trench Stepped Hetero Channel MOSFET on Analog Performance

In this work a new laterally InGaAs/InAs/ InGaAs composite channel layer metal step gate has been proposed. Due to the formation of a composite layer near the channel, it enhances the electrostatic control along the channel, which offers an enhancement in the current. In the existing device, the gate area is split into three different steps with increasing effective oxide thickness (EOT) from source to drain. Subsequently, the device achieves lower gate to drain capacitance as a result of decreasing On-resistance. Based on 2D TCAD simulation the analog performances like threshold voltage, On current, transconductance, and subthreshold slope are analyzed. From the simulation, it is observed that stepped composite (CS MOSFET) offers improved performance as compared to conventional MOSFET (C MOSFET).