A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET

This paper investigates the impact of Si/SiO2 interface traps on the boundary of a sectorial SD-MAGFET in detail. Ionized acceptor traps act like negative oxide charges, depleting the device’s conduction channel, whereas ionized donor traps act like positive oxide charges, weakening the magnetic sensing by inducing a parasitic channel at the boundary. The larger the influence on magnetic sensitivity, in particular, the higher the density of acceptor or donor traps. Furthermore, trap energy also has an influence on sensitivity, with larger effect for traps lying closer to the valence or conduction band. The impacts of interface traps were numerically simulated using the TCAD simulator - Silvaco Atlas.