A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs

In this paper, we present a production-ready DC, small- and large-signal model for large-periphery GaN HEMTs. The Device Under Test (DUT) is a 200 μm × 10 HEMT based on a GaN-on-SiC stack. DC measurements were performed on the device up to a drain bias of 30 V – typical of conventional amplifier applications. S-Parameter measurements were performed up to 43.5 GHz to account for most 5G New Radio bands. A high-pass feedback network between the gate and drain port was used to obtain a better fit for the output RF characteristics – leading to better matching network design.