Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer

This research aims to develop platform for Ge channel CFETs device fabrication. Double or higher density layered Ge film structure is required for Ge channel CFETs. Two different technique is investigated and discussed. Ge/Si/Ge stack epitaxy combined with wet selective etching provides a simplified platform with reasonable cost. While the developed layer transfer process provides higher flexibility and possibility. The combination of different orientation promoting n-type and p-type channel mobility respectively can be realized.