Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices

An AlGaN-recess-free, ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure passivated with a charge-modulation SiN
x
passivation layer, is proposed for fabrication of GaN-based enhancement- and depletion-mode high-electron-mobility transistors (HEMTs), and heterojunction-based power rectifiers on GaN-on-Si platform. The UTB-AlGaN/GaN heterostructure is an attractive technology platform for on-chip integration of power devices with power-driven circuits for GaN-based smart power ICs.