Integration Method of Millimeter Wave Chip Cavity Passive Components Based on Metal Assisted Chemical Etching

This paper presents a method for manufacturing millimeter wave cavity devices based on metal assisted chemical etching(MacEtch). This method has been applied to fabricate precise silicon-based rectangular waveguides and bandpass filters with low roughness and high feature perpendicularity.This technology is capable of fabricating on-chip microwave devices with high aspect ratio structures. Such structure is difficult to be obtained by inductively-coupled-plasma reactive ion etching (ICP-RIE), which has great potential in the manufacturing of microwave devices. At the same time, a method of using SOI (Silicon-on-Insulator) substrates to realize double-sided chip integration is proposed, which can improve wafer utilization.