Fabrication of Se-Fe2O3-based Schottky Diode Using Cantilever-based Ag-contact Printing Technology : Topic: NS/NC - Non-silicon and Non-CMOS

The fabrication of a sub-10 μm Se-Fe
2
O
3
channel Schottky diode built using cantilever-based Ag-contact printing technology is discussed in this work. There are two phases to the fabrication process. In the first phase, the Ag electrodes are produced using a state-of-the-art micro-girder (μG) cantilever-based in-house printing system. The second phase involves dropcasting the dispersion of leaf-structured Se-Fe
2
O
3
in deionized (DI) water between the printed electrodes. The printed device’s electrical response is observed to be similar to that of a Schottky diode. An analytical model based on the thermionic emission theory was used to verify these features with the acquired experimental results. The ideality factor of the device is extracted as 3.44. At room temperature, the device exhibits a barrier height of 0.72 eV and series resistance of 159 kΩ. As the novel μG printing technology is in its early stages of development, the results presented in this work are preliminary in nature and work on further optimization is being carried out.