High Gain Pseudo-Inverter Based on Silicon-on-Insulator With Ambipolar Transport

The purpose of this article is to provide insight into ambipolar transport properties of the CMOS-like pseudo-inverter (
$\Psi $
-inverter) in silicon-on-insulator (SOI) substrate. The
$\Psi $
-inverter demonstrated in this work simply uses three probes instead of metal contact. The channel is controlled by the bottom gate and shows ambipolar conduction. The ambipolar voltage transfer characteristics (VTC) from the Si thin-film layer of the SOI device is extracted. The
$\Psi $
-inverter operates both in the first and third quadrants, achieving remarkable gains as high as 25.8 and 936.1 at drain voltages
${V}_{{\mathrm {DD}}}$
= 3 and 7 V, respectively. Moreover, TCAD simulated results are approximated to the experimental data considering top Si interface traps to reveal the electrostatic potential and carrier concentration profiles. Exceptionally sensitive surface properties and high gain of the
$\Psi $
-inverter demonstrated in our work enable it a promising candidate for sensor applications.