220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure

In this paper, we proposed a 220-GHz power amplifier using 70-nm high electron mobility transistor (HEMT) process for beyond-5G wireless applications. The PA is composed of four-stage common-source (CS) transistors cascaded through grounded coplanar waveguide (GCPW) and microstrip line (ML) structures. According to the simulation results, the PA achieves an output 1 dB compression point (OP
1dB
) of 11.1 dBm and saturated output power (P
sat
) of 14.7 dBm at 210 GHz. The operating bandwidth is greater than 40 GHz. A peak small-signal gain of 27 dB is achieved and the input and output reflection coefficient are almost better than -10 dB from 190 GHz to 240 GHz.