Theory and Computational Modelling of a 3D Electro-Absorption Modulator

Recently optoelectronics devices have been prominent in the research field. The electro-absorption modulator has been used to modulate the strength of a laser beam using an electrical voltage (intensity modulators) depending on the Franz-Keldysh effect. This paper presents a positive-intrinsic-negative diode (PIN) structure to model the electro-absorption modulator using the finite element method (FEM). This structure is distinguished by its has small footprint is only 10 µm
²
has been getting. The proposed structure's dimension is carefully calculated to suit the 1.55 µm wavelength. The proposed modulator consists of germanium as a core and silicon as a substrate with an active length is 15 µm to be compatible with chip optical interconnects. The f-3db bandwidth is high equal to 61.5 GHz, despite the small footprint with low insertion loss and high extinction ratio at low reverse voltage bias.