Conductance Quantization in CH3NH3PbI3 Memristor

We report on the observation of conductance quantization (CQ) phenomenon in memristor devices with Au/CH
₃
NH
₃
PbI
₃
/FTO structure at room temperature. Under voltage-sweep measurements, conductance plateaus close to integer and half integer values of the quantized unit G
₀
= 2 e
²
/h are observed in the SET/RESET process, which agree well with CQ behavior. The CQ mechanism of the memristor is studied and attributed to the formation and annihilation of atomic conductive filaments in CH
₃
NH
₃
PbI
₃
due to iodide ions migration. CQ behavior in CH
₃
NH
₃
PbI
₃
memristor would be useful for multi-level storage, and also, advance CH
₃
NH
₃
PbI
₃
for building quantum electronic devices.