A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication

This paper presents a Ka-band 40 W power and 30 % PAE GaN power amplifier MMIC using 0.15 μm gate-length GaN on SiC transistor with ISV structure. The fabricated 3-stage single-ended GaN power amplifier MMIC achieves 45.0 - 46.2 dBm output power and 23-30 % PAE over the 26 - 31 GHz band (FBW=17.5 %) under pulsed condition.