A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

For the first time, a silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring segmented deep oxide trenches (SDOTs) is proposed, which aims to suppress the saturation current (
${I}_{\text {sat}}$
) and enhance the short-circuit withstanding capability. SDOTs, refilled by the polysilicon and shorted to the emitter electrode, are inserted in the region nearby the inversion channel. In the ON-state, the electric potential at the channel end can be modified and effectively lowered by the grounded SDOTs, which indicates the reduced
${I}_{\text {sat}}$
and prolonged short-circuit withstanding time (
${t}_{\text {SC}}$
). Compared with the conventional SOI LIGBT, the proposed SOI LIGBT achieves a 49.5% decrease in
${I}_{\text {sat}}$
at
${V}_{\text {CE}} = {10}$
V and
${V}_{\text {GE}} = {15}$
V, and a 406% increase in
${t}_{\text {SC}}$
at
${V}_{\text {CE}} = {400}$
V and
${V}_{\text {GE}} = {15}$
V.