Analysis of p-GaN based high electron mobility transistor for RF power application

The development and DC analysis of p-GaN based high electron mobility transistor (HEMT) is described in this paper. In on-state, a higher drain current, lower RON and higher breakdown voltages (VBr) are obtained simultaneously. The maximum drain source current observed for p-GaN HEMT is 0.26 A/mm at V
D
= 1 V and V
G
= 5 V. Furthermore the breakdown voltage of 870 V for 7 μm gate-drain spacing has been achieved. Hence, the proposed p-GaN based HEMT is suitable for next generation RF-power applications.