Effect of Indium concentration in Multiple Quantum Well based InGaN/GaN Light Emitting Diode using TCAD

In the proposed work, the molar concentration of indium is varied for InGan/GaN Light Emitting Diode (LED). Technological computer aided design (TCAD) physical simulator is used to simulate the various electrical and optical parameters of the device. From the simulation, it is understood that the higher concentration affects the device performance. The mole fraction of indium is preferred to tak8e 0.1 to get higher luminous power, radiative and recombination rate. InGan/GaN LED with less indium content is advisable for the fields like indoor and outdoor lightening applications.