Investigation of Gate-all-around p-type Dual Metal Double Gate Silicon Nanotube FET

The scaling constrains of conventional MOSFETs, requires the device architecture modification without degrading the device performance. The p type gate-allaround dual metal double gate silicon nanotube field effect transistor (GAA DMDG Silicon Nanotube FET) with a gate length of 14nm has been developed. The proposed Silicon Nanotube FET ’s inner and outer gate consists of two gate metals. The DMDG Silicon Nanotube FET exhibited reduced short channel effects (SCEs). The subthreshold swing (SS), ION/IOFF ratio are 35.3 mV/dec and 3.30×10
⁹
respectively at VDS=-0.3V. The impact of drain voltage scaling, output characteristics, capacitance analysis and transconductance are studied. It’s been noticed that using dual metal gate with different workfunction increases carrier transport in the channel region.