Impact of Temperature on DC and AC Characteristics of Stacked Oxide SiO2/HfO2 Cylindrical Gate Tunnel FETs

Based on three dimensional mathematical simulation, it has demonstrated that impression of temperature on the DC (i.e.
$I_{d}, g_{m}, SS$
, and
$I_{\text{ON}}/I_{\text{OFF}}$
ratio) and AC (i.e.
$C_{gg}, f_{t}$
, and GBW) characteristics of stacked-oxide SiO
2
/HfO
2
cylindrical gate (CG) tunnel field-effect transistors (TFETs). From the results of simulation, it is perceived that OFF-state current drastically changed for entire range of temperature (250K to 400K) while ON-state current is almost independent of temperature. Further, the effects of temperature on
$C_{gg}, f_{t}$
, and GBW shows that it is drastically changed at higher
$V_{\text{gs}}$
while almost constant with lower
$V_{\text{gs}}(V_{\text{gs}} < 0.5\mathrm{V})$
.