An Equivalent Circuit Model of Passively Mode-Locked Hybrid Silicon Laser

In this letter, for the first time, we present a circuit-level model (CLM) of semiconductor mode-locked laser (MLL) based on delay differential equation (DDE). To confirm that our model is valid for different structures, the CLM of the hybrid silicon MLL is analysed for the cases without and with an intracavity filter. The ability of CLMs to replicate dynamic behavior of repetition rate is demonstrated. Furthermore, the effect of linewidth enhancement factor (LEF) on pulse width and peak power is investigated. The presented model simulates transition from mode-locking to chaotic regime by changing LEF, rigorously. The results of CLM are in good agreement with numerical and experimental results reported in other works. By a versatile procedure introduced in this letter for CLM, different type of MLLs based on DDE can be developed.